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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD904 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 3A *Built-in Damper Diode APPLICATIONS *Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww scs .i VALUE 1500 600 6 7 10 3 UNIT V V .cn mi e V A ICM Collector Current- Peak Collector Power Dissipation @ Ta= 25 A PC Collector Power Dissipation @ TC= 25 TJ Junction Temperature 50 W 150 Tstg Storage Temperature Range -40~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD904 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 35mH 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.6 V ICES Collector Cutoff Current VCB= 1500V; VBE= 0 IEBO Collector Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage w w. w IC= 1A; VCE= 5V IC= 4A; VCE= 5V .cn mi cse is 44 8 5 1.0 mA 100 mA 10 IF= 4A 2.0 V isc Websitewww.iscsemi.cn 2 |
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